Light-emitting semiconductor device using a Group III nitride co

Details Light-emitting semiconductor device using a Group III nitride co Light-emitting semiconductor device using a Group III nitride co

1997-03-07

1998-05-19

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257101, 257102, 257103, H01L 3300

Patent

active

057539391

ABSTRACT:
A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.

REFERENCES:
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5408120 (1995-04-01), Manabe et al.
Nakamura et al., "Candela-class High-brightness InGaN/AlGaN Double-heterostructure Blue-light-emitting Diodes", Applied Physics Letters, Mar. 28, 1994, vol. 64, No. 13, pp., 1687-1689.

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