4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With heterojunction

Tsuneyuki Kaise

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Compound semiconductor epitaxial wafer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent

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Compound semiconductor epitaxial wafer

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – Stepped profile
Patent

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Light emitting diode having an improved GaP compound substrate f

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Patent

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Method for fabricating compound semiconductor epitaxial...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate

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Method for manufacturing compound semiconductor epitaxial wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Profile ID: LFUS-PAI-P-629038

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