Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-12-11
2007-12-11
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S022000, C438S029000, C438S150000, C438S151000, C438S154000, C438S155000, C438S158000, C438S163000, C438S164000
Reexamination Certificate
active
10941837
ABSTRACT:
The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.
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Office Action (Application No. 200410078765.3) dated Mar. 2, 2007.
Ikeda Hisao
Matsuda Yutaka
Nagai Masaharu
Saito Keiko
Sakakura Masayuki
Au Bac H.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski M.
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