Lead frame, method for manufacturing the same, and semiconductor

Details Lead frame, method for manufacturing the same, and semiconductor Lead frame, method for manufacturing the same, and semiconductor

1998-03-31

1999-06-22

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

Of specified material other than copper

257666, 361813, 438123, H01L 2348, H01L 23495

Patent

active

059145323

ABSTRACT:
An object of this invention is to effectively prevent a progress of corrosion due to a local cell produced between a copper raw material (30) of a lead frame and a plating layer (29) on the surface, secure an anchor effect necessary for a chip loading surface without providing a palladium or palladium alloy film (29) with an excessive thickness and improve the reliability of a semiconductor device while achieving a reduction of production cost of a semiconductor device.
Ground plating layers (27), (28) of multilayer structure of nickel are formed entirely on the surface of the raw material and then the palladium or palladium alloy plating layer (29) is formed on the surface thereof. A first ground plating layer (27) is formed so as to have an elaborate quality by supplying a DC current of a predetermined current value thereto as a plating current. A second ground plating layer (28) is formed so as to have a precedence in growth of crystal in the vertical direction by supplying a current such as a pulse current, in which its current value changes as a plating current.

REFERENCES:
patent: 5001546 (1991-03-01), Butt
patent: 5206186 (1993-04-01), Neugebana et al.
patent: 5436082 (1995-07-01), Mathew
patent: 5635755 (1997-06-01), Kinghorn
patent: 5668060 (1997-09-01), Sato et al.
patent: 5675177 (1997-10-01), Abys et al.
patent: 5684329 (1997-11-01), Serizawa

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