Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2006-05-23
2006-05-23
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S676000, C257S686000, C257S723000, C257S777000, C438S123000, C438S107000, C438S108000, C438S109000
Reexamination Certificate
active
07049684
ABSTRACT:
A resin-encapsulated semiconductor device includes a semiconductor chip, a plurality of inner leads that are connected to a group of electrodes of the semiconductor chip, respectively, and an encapsulating resin that encapsulates a connection part located between the semiconductor chip and the inner leads. Each of the inner leads includes a protruded portion provided on a surface thereof on an outer side relative to the periphery of the semiconductor chip. The protruded portion protrudes in a thickness direction and is provided with a step portion formed in its side portion. The group of electrodes of the semiconductor chip is connected to surfaces of inner portions of the inner leads located on an inner side relative to their protruded portions, through electroconductive bumps, respectively. The encapsulating resin encapsulates the semiconductor chip and the electroconductive bumps and is formed to expose surfaces of the protruded portions. The surfaces of the protruded portions that function as external terminals can be reduced in size and thereby the pitch between the external terminals can be reduced.
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Fukuda Toshiyuki
Horiki Hiroshi
Minamio Masanori
Hamre Schumann Mueller & Larson P.C.
Matsushita Electric - Industrial Co., Ltd.
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