Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-28
2008-09-09
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257S371000, C257SE29256, C438S286000
Reexamination Certificate
active
07423319
ABSTRACT:
A semiconductor structure includes a first well region of a first conductivity type overlying a substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first well region, a third well region of the second conductivity type adjacent and spaced apart from the first well region, a first deep well region of the second conductivity type underlying at least portions of the first and the second well regions, a second deep well region of the second conductivity type underlying the third well region and spaced apart from the first deep well region, an insulation region in the first well region, a gate dielectric extending from over the insulation region to over the second well region, and a gate electrode on the gate dielectric.
REFERENCES:
patent: 2004/0129983 (2004-07-01), Mallikarjunaswamy
Hsieh Robin
Hsu Pai-Kang
Huang Tsung-Yi
Lin Tsai Chun
Liu Ruey-Hsin
Pert Evan
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Tan N
LandOfFree
LDPMOS structure with enhanced breakdown voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with LDPMOS structure with enhanced breakdown voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LDPMOS structure with enhanced breakdown voltage will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3976420