LDMOS transistor

Details LDMOS transistor LDMOS transistor

2005-12-29

2009-08-04

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257SE29266, C257SE29261

Reexamination Certificate

active

07569884

ABSTRACT:
A lateral DMOS transistor having a uniform distribution of channel impurity concentration includes a drift region of a first conductivity; a body of a second conductivity, the body being disposed in the drift region and has a channel thereon; and a source region of the first conductivity, the source region being disposed within the body and having an upper region surrounded by a first impurity region of the first conductivity.

REFERENCES:
patent: 6933560 (2005-08-01), Lee et al.
patent: 7067878 (2006-06-01), Ohyanagi et al.
patent: 7109562 (2006-09-01), Lee
patent: 7126193 (2006-10-01), Baiocchi et al.

Affiliated with

Also associated with

Rating

LDMOS transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with LDMOS transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LDMOS transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4082286