Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-02
2008-09-02
Fahmy, Wael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S401000, C257S328000
Reexamination Certificate
active
11337147
ABSTRACT:
A semiconductor device includes a first doped region disposed on a first well in a semiconductor substrate; a second doped region disposed on a second well adjacent to the first well in the semiconductor substrate, the second doped region having a dopant density higher than that of the second well; and a gate structure overlying parts of the first and second wells for controlling a current flowing between the first and second doped regions. A first spacing distance from an interface between the second doped region and the second well to its closest edge of the gate structure is greater than 200 percent of a second spacing distance from a center point of second doped region to the edge of the gate structure, thereby increasing impedance against an electrostatic discharge (ESD) current flowing between the first and second doped regions during an ESD event.
REFERENCES:
patent: 6664140 (2003-12-01), Lee et al.
patent: 2004/0262680 (2004-12-01), Ehwald et al.
patent: 2006/0071236 (2006-04-01), Jensen et al.
Chen Chi-Chih
Lee Jian-Hsing
Lin Yi-Chun
Wu Kuo-Ming
Fahmy Wael
Green Telly D
K & L Gates LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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