LDMOS device and method of fabrication of LDMOS device

Details LDMOS device and method of fabrication of LDMOS device LDMOS device and method of fabrication of LDMOS device

2007-03-20

2007-03-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S258000, C438S585000, C257SE21336, C257SE21426

Reexamination Certificate

active

11063932

ABSTRACT:
A lateral double diffused metal oxide semiconductor (LDMOS) device, and method of fabricating such a device, are provided. The method comprises the steps of: (a) providing a substrate of a first conductivity type; (b) forming within the substrate a well region of a second conductivity type, the well region having a super steep retrograde (SSR) well profile in which a doping concentration changes with depth so as to provide a lighter doping concentration in a surface region of the well region than in a region below the surface region of the well region; (c) forming a gate layer which partly overlies the well region and is insulated from the well region; and (d) forming one of a source region and a drain region in the well region. The presence of the SSR well region provides a lighter surface doping to enable a higher breakdown voltage to be obtained within the LDMOS device, and heavier sub-surface doping to decrease the on-resistance.

REFERENCES:
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Zeitzoff, Peter M., “Front-End Trends, Challenges, and Potential Solutions for the 180-100 nm IC Technology Generations,” Semiconductor Fabtech—10th Ed., (Pub. Date Unknown), pp. 275-281.

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