LDD polysilicon thin film transistor and manufacturing method th

Details LDD polysilicon thin film transistor and manufacturing method th LDD polysilicon thin film transistor and manufacturing method th

1997-08-19

1998-08-04

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438305, H01L 2100, H01L 21336

Patent

active

057892830

ABSTRACT:
In an LDD polysilicon thin-film transistor, the active layer is formed in a single body and the upper surface thereof is oxidized. A gate insulating layer has a bird's beak type structure and the source and drain region are simultaneously formed in high and low concentrations by performing one ion implantation process, so that the manufacturing process is simplified and the quality of the active layer is improved. Also, the ion concentration level tapers off toward the channel, so that the V.sub.gs -I.sub.ds characteristic is improved.

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