LDD Polysilicon thin-film transistor

Details LDD Polysilicon thin-film transistor LDD Polysilicon thin-film transistor

1994-12-27

1997-12-16

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257 66, 257347, 257349, 257352, 437 43, 437 46, H01L 2904, H01L 2976, H01L 2994, H01L 2701

Patent

active

056988826

ABSTRACT:
In an LDD polysilicon thin-film transistor, the active layer is formed in a single body and the upper surface thereof is oxidized. A gate insulating layer has a bird's beak type structure and the source and drain region are simultaneously formed in high and low concentrations by performing one ion implantation process, so that the manufacturing process is simplified and the quality of the active layer is improved. Also, the ion concentration level tapers off toward the channel, so that the V.sub.gs -I.sub.ds characteristic is improved.

REFERENCES:
patent: 5001539 (1991-03-01), Inoue et al.
patent: 5116768 (1992-05-01), Kawamura
patent: 5163180 (1992-11-01), Eltoukhy et al.
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5466958 (1995-11-01), Kakumu
patent: 5567966 (1996-10-01), Hwang

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