Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-27
1997-12-16
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 59, 257 66, 257347, 257349, 257352, 437 43, 437 46, H01L 2904, H01L 2976, H01L 2994, H01L 2701
Patent
active
056988826
ABSTRACT:
In an LDD polysilicon thin-film transistor, the active layer is formed in a single body and the upper surface thereof is oxidized. A gate insulating layer has a bird's beak type structure and the source and drain region are simultaneously formed in high and low concentrations by performing one ion implantation process, so that the manufacturing process is simplified and the quality of the active layer is improved. Also, the ion concentration level tapers off toward the channel, so that the V.sub.gs -I.sub.ds characteristic is improved.
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patent: 5412493 (1995-05-01), Kunii et al.
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patent: 5567966 (1996-10-01), Hwang
Martin Wallace Valencia
Samsung Electronics Co,. Ltd.
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