Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-21
2006-02-21
Lebentritt, Michael (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S478000, C438S483000, C438S479000
Reexamination Certificate
active
07001813
ABSTRACT:
One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.
REFERENCES:
patent: 6086673 (2000-07-01), Molnar
patent: 6252261 (2001-06-01), Usui et al.
patent: 2002/0086534 (2002-07-01), Cuomo et al.
Lee et al., “MBE Growth of Wurtzite GaN on LaAIO/(100) substrate”, Journal of Crystal Growth, vol. 213, No. 1-2, pp. 33-39, May 2000.
Lee et al., “MBE Growth of Wurtzite GaN on LaAIO/100 substrate”, Journal of Crystal Growth, vol. 213, No. 1,2,pp. 33-39, May 2000.
E.J. Miller et al., “Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope”, Journal of Applied Physics, vol. 91, No. 12, Jun. 15, 2002, pp. 9821-9826.
E.J. Miller et al., “Reverse-bias leakage current reduction in GaN Schottky diodes by surface modification with an atomic force microscope,” Abstract from Technical Program Session V of Electronic Materials Conference, Santa Barbara, CA (Jun. 25-27, 2002) 1 page (Note: may have been published before Jun. 25, 2002).
E.J. Miller et al., “Characterization and Local Passivation of Reverse-Bias Current Leakage Paths in an AIGaN/GaN Heterostructure, Abstract from Nov. 2001 MRS Fall Meeting,” Symposium 1, Session 110.7 (1 page), publ.'d online at www.mrs.org/meetings/fall—2001/.
Manfra Michael James
Weimann Nils Guenter
Huynh Yennhu B.
Lebentritt Michael
Lucent Technologies - Inc.
McCabe John F.
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