Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2008-01-31
2010-10-26
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Reexamination Certificate
active
07820549
ABSTRACT:
Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having been produced by means of a layer transfer process comprising at least one RTA step, wherein the semiconductor wafer has a warp of less than 30 μm, a DeltaWarp of less than 30 μm, a bow of less than 10 μm and a DeltaBow of less than 10 μm. Processes for the production of a semiconductor wafer of this type require specific heat treatment regimens.
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Blietz Markus
Hoelzl Robert
Huber Andreas
Wahlich Reinhold
Brooks & Kushman P.C.
Garber Charles D
Siltronic AG
Stevenson Andre′ C
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