Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-05
2005-07-05
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000
Reexamination Certificate
active
06913971
ABSTRACT:
Methods for transferring a layer of material from a source substrate having a zone of weakness onto a support substrate to fabricate a composite substrate are described. An implementation includes forming at least one recess in at least one of the source and support substrates, depositing material onto at least one of a front face of the source substrate and a front face of the support substrate, pressing the front faces of the source and support substrates together to bond the substrates, and detaching a transfer layer from the source substrate along the zone of weakness. When the front faces are pressed together, any excess material is received by the recess. The recess may advantageously include an opening in the front face of at least one of the source substrate and the support substrate.
REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6376332 (2002-04-01), Yanagita et al.
patent: 6406336 (2002-06-01), Stansbury
patent: 6448155 (2002-09-01), Iwasaki et al.
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6548338 (2003-04-01), Bernstein et al.
patent: 6673694 (2004-01-01), Borenstein
patent: 6727549 (2004-04-01), Doyle
patent: 2002/0081822 (2002-06-01), Yanagita et al.
patent: 1 061 566 (2000-12-01), None
patent: 2811807 (2002-01-01), None
patent: WO/02/05344 (2002-01-01), None
Aspar Bernard
Bressot Séverine
Rayssac Olivier
Commissariat à l'Energie Atomique (CEA)
S.O.I. Tec Silicon on Insulator Technologies S.A.
Thompson Craig A.
Vesperman William C.
Winston & Strawn LLP
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