Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Reexamination Certificate
2011-04-12
2011-04-12
Duda, Kathleen (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
C430S394000, C430S330000
Reexamination Certificate
active
07923202
ABSTRACT:
A structure and a method for forming the same. The method includes providing a structure which includes (a) a to-be-patterned layer, (b) a photoresist layer on top of the to-be-patterned layer wherein the photoresist layer includes a first opening, and (c) a cap region on side walls of the first opening. A first top surface of the to-be-patterned layer is exposed to a surrounding ambient through the first opening. The method further includes performing a first lithography process resulting in a second opening in the photoresist layer. The second opening is different from the first opening. A second top surface of the to-be-patterned layer is exposed to a surrounding ambient through the second opening.
REFERENCES:
patent: 4394437 (1983-07-01), Bergendahl et al.
patent: 4568631 (1986-02-01), Badami et al.
patent: 6171761 (2001-01-01), Minamide et al.
patent: 6218089 (2001-04-01), Pierrat
patent: 6632590 (2003-10-01), Tzu et al.
patent: 2007/0212654 (2007-09-01), Larson et al.
Furukawa Toshiharu
Hakey Mark Charles
Holmes Steven John
Horak David Vaclav
Koburger III Charles William
Brown Katherine
Duda Kathleen
International Business Machines - Corporation
Schmeiser Olsen & Watts
Sullivan Caleen O
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