Layer-by-layer etching apparatus using neutral beam and...

Details Layer-by-layer etching apparatus using neutral beam and... Layer-by-layer etching apparatus using neutral beam and...

2006-08-22

2006-08-22

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S708000, C216S066000

Reexamination Certificate

active

07094702

ABSTRACT:
A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.

REFERENCES:
patent: 5462629 (1995-10-01), Kubota et al.
patent: 5540812 (1996-07-01), Kadomura
patent: 6017826 (2000-01-01), Zhou et al.
patent: 6025115 (2000-02-01), Komatsu et al.
patent: 6162733 (2000-12-01), Obeng
U.S. Appl. No. 10/086,497, filed Feb. 28, 2002, Yeom et al.

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