Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-04-24
2010-11-09
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S335000, C257S336000, C257SE29258
Reexamination Certificate
active
07829408
ABSTRACT:
The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.
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Chu Chien-Wen
Lien Shih-Chin
Lin Cheng-Chi
Su Shin
Yeh Chin-Pen
Birch & Stewart Kolasch & Birch, LLP
Macronix International Co. Ltd.
Patton Paul E
Smith Zandra
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