Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-12-13
1997-07-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257404, 257409, 257655, 257327, 257345, 257401, 257411, H01L 2978
Patent
active
056486715
ABSTRACT:
A lateral thin-film silicon-on-insulator (SOI) device includes a lateral semiconductor device such as a diode or MOSFET provided in a thin semiconductor film on a thin buried oxide. The lateral semiconductor device structure includes at least two semiconductor regions separated by a lateral drift region. By providing a substantially linear lateral doping profile in the lateral drift region, and by providing a conductive field plate on a linearly-graded top oxide insulating layer, a device structure is obtained in which conduction losses can be reduced without reducing breakdown voltage.
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Biren Steven R.
Crane Sara W.
Hardy David B.
U S Philips Corporation
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