Lateral RF MOS device having a combined source structure

Details Lateral RF MOS device having a combined source structure Lateral RF MOS device having a combined source structure

1999-04-08

2000-03-07

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

257624, H01L 2940

Patent

active

060344156

ABSTRACT:
A lateral RF MOS device having a combined source connection structure is disclosed. The combined source connection structure utilizes a diffusion area and a conductive plug region. In one embodiment, the diffusion source area forms a contact region connecting the top surface of the semiconductor material to a highly conductive substrate of the lateral RF MOS transistor structure. In another embodiment, the diffusion source area is located completely within the epitaxial layer of the lateral RF MOS transistor structure. The conductive plug region makes a direct physical contact between a backside of the semiconductor material and the diffusion contact area.

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patent: 5037782 (1991-08-01), Nakamura et al.
patent: 5079602 (1992-01-01), Harada et al.
patent: 5084750 (1992-01-01), Adlerstein

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