Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29258
Reexamination Certificate
active
07915677
ABSTRACT:
A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
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Chiang Puo-Yu
Hsu Shun-Liang
Huang Tsung-Yi
Liu Ruey-Hsin
Chaudhari Chandra
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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