Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S342000, C257S356000, C257SE29255
Reexamination Certificate
active
07989890
ABSTRACT:
A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
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Chen Fu-Hsin
Chiang Puo-Yu
Hsu Shun-Liang
Huang Chyi-Chyuan
Huang Eric
Mandala Victor
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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