Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-10-26
2011-10-04
Ho, Tu-Tu (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S288000, C438S291000, C438S302000, C257S335000, C257S376000, C257SE29309, C257SE21180, C257SE21336, C257S324000
Reexamination Certificate
active
08030166
ABSTRACT:
A charge trapping memory cell is described, having pocket implants along the sides of the channel and having the same conductivity type as the channel, and which implants have a concentration of dopants higher than in the central region of the channel. This effectively disables the channel in the region of non-uniform charge trapping caused by a bird's beak or other anomaly in the charge trapping structure on the side of the channel. The pocket implant can be formed using a process compatible with standard shallow trench isolation processes.
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Haynes Beffel & Wolfeld LLP
Ho Tu-Tu
Macronix International Co. Ltd.
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