Lateral PNP and method of manufacture

Details Lateral PNP and method of manufacture Lateral PNP and method of manufacture

2000-06-09

2003-04-22

Lee, Eddie (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S236000, C438S316000, C438S325000, C438S335000, C257S557000, C257S575000

Reexamination Certificate

active

06551869

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to the field of integrated circuits and more specifically to a lateral bipolar transistor and a method of manufacture.
BACKGROUND OF THE INVENTION
The growth of the wireless communication market has lead to the demand for integrated circuits that are needed for high speed, high drive, mixed-voltage and analog-digital applications. These include products such as mixers, low noise amplifiers, voltage controlled oscillators, and also analog-to-digital and digital-to-analog converters, as well as synthesizers. This demand has lead to research for bipolar transistors such as lateral PNPs that can be produced in a cost-effective manner utilizing Bipolar-CMOS (BiCMOS) techniques.
Current standard sub-micron BiCMOS techniques are unable to build low-cost lateral PNPs. One reason is that standard BiCMOS technologies for making a lateral PNP is based upon the formation of a retrograde well underlying the base, collector and emitter region. This results in a device having an unsuitably low current gain due to the large base width and doping concentration. Additionally, the manufacture of lateral PNPs using conventional BiCMOS methods requires additional process steps above and beyond those required to make other devices. This leads to increased costs.
Attempts have been made to increase the current gain in lateral PNPs by using separate gate controls to turn on parasitic PMOS in the lateral PNP structure. However, this leads to a four terminal device and is difficult to use in most applications.
Thus, there is a need for a lateral PNP that has both a high current gain and can be manufactured without the addition of manufacturing steps.


REFERENCES:
patent: 3919005 (1975-11-01), Schinella et al.
patent: 4005470 (1977-01-01), Tucci et al.
patent: 4115797 (1978-09-01), Hingarh et al.
patent: 4180827 (1979-12-01), Gates
patent: 4203126 (1980-05-01), Yim et al.
patent: 4458158 (1984-07-01), Mayrand
patent: 4484388 (1984-11-01), Iwasaki
patent: 4740821 (1988-04-01), Bertotti et al.
patent: 4956305 (1990-09-01), Arndt
patent: 5016075 (1991-05-01), Minato
patent: 5066602 (1991-11-01), Takemoto et al.
patent: 5302534 (1994-04-01), Monk et al.
patent: 5929506 (1999-07-01), Hutter et al.
patent: 6005283 (1999-12-01), Kim et al.
patent: 6034413 (2000-03-01), Hastings et al.
patent: 2001/0000413 (2001-04-01), Pinto et al.
patent: 56081969 (1981-07-01), None

Affiliated with

Also associated with

Rating

Lateral PNP and method of manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral PNP and method of manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral PNP and method of manufacture will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3022189