Lateral oxidation with high-K dielectric liner

Details Lateral oxidation with high-K dielectric liner Lateral oxidation with high-K dielectric liner

2011-04-26

2011-04-26

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000

Reexamination Certificate

active

07932150

ABSTRACT:
Disclosed are methods of making and using a high-K dielectric liner to facilitate the lateral oxidation of a high-K gate dielectric, integrated circuit structures containing the high-K dielectric liner and/or oxidized high-K gate dielectric, and other associated methods.

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McFeeley, et al., Role of Oxygen Vacancies in VFB/Vt Stability of pFET metals on HfO2, Symposium on VLSI Technology Digest of Technical Papers, 2005.
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Cartier, et al.; Role of Oxygen Vacancies in VFB/Vt stability of pFET metals on HfO2, 2005 Symposium on VLSI Technology Digest of Technical Papers, pp. 230-231.

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