Lateral-only photoresist trimming for sub-80 nm gate stack

Details Lateral-only photoresist trimming for sub-80 nm gate stack Lateral-only photoresist trimming for sub-80 nm gate stack

2005-03-22

2005-03-22

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Masking

Radiation resist

C438S949000, C438S947000, C438S945000

Reexamination Certificate

active

06869899

ABSTRACT:
The invention relates generally to lithographic patterning of very small features. In particular, the invention relates generally to patterning of semiconductor circuit features smaller than lithographically defined using either conventional optical lithography or next generation lithography techniques. The invention relates more particularly, but not by way of limitation, to lateral trimming of photoresist images.

REFERENCES:
patent: 5985524 (1999-11-01), Allen et al.
patent: 6420097 (2002-07-01), Pike et al.
patent: 20020160320 (2002-10-01), Shields et al.
A High Resolution 248 nm Bilayer Resist, Qinghuang Lin, et al., Part of the SPIE Conference on Advances in Resist Technology and Processing XVI; SPIE Vo. 3678; Santa Clara, CA (Mar. 1999).
Lateral-only Photoresist Trimming for sub-80 nm Gate Stack Definition; Arpan P. Mahorowala; IBM (Jun., 2000).
Low Temperature Etching of Silylated Resist in an Oxygen Plasma Generated by an Electron Cyclotron Resonance Source; K.T. Sung; J. Electrochem. Soc., vol. 140, No. 12 (Dec. 1993).

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