Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-11-09
2011-11-15
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S291000, C438S297000
Reexamination Certificate
active
08058129
ABSTRACT:
A lateral double diffused metal oxide semiconductor (LDMOS) device and a method of manufacturing the same. A LDMOS device may include a high voltage well formed over a substrate, a reduced surface field region formed thereover which may be adjacent a body region, and/or an isolation layer. An isolation layer may include a predetermined area formed over a reduced surface field region, may be partially overlapped with a top surface of a substrate and/or may include an area formed adjacent a high voltage well. A low voltage well may be formed over a substrate. A gate electrode may extend from a predetermined top surface of a body region to a predetermined top surface of an isolation layer. A drain region may be formed over a low voltage well. A source region may be formed over a body region and may have at least a portion formed under a gate electrode.
REFERENCES:
patent: 5306652 (1994-04-01), Kwon et al.
patent: 6483149 (2002-11-01), Mosher et al.
Dongbu Hi-Tek Co., Ltd.
Pham Long
Sherr & Vaughn, PLLC
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