Lateral double-diffused metal oxide semiconductor (LDMOS)...

Details Lateral double-diffused metal oxide semiconductor (LDMOS)... Lateral double-diffused metal oxide semiconductor (LDMOS)...

2006-04-25

2009-12-22

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S335000

Reexamination Certificate

active

07635621

ABSTRACT:
A lateral double-diffused metal oxide semiconductor (LDMOS) device is disclosed. The LDMOS device comprises a gate region and a body region under the gate region. The LDMOS device includes an enhanced drift region under the gate region. The enhanced drift region touches the body region. By designing the device such that the enhanced drift region overlaps and compensates the lateral tail of the body region of the LDMOS transistor, the Ron*area product is reduced. Accordingly, the on-resistance is significantly reduced while minimally affecting the breakdown voltage of the device.

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patent: W0 03/021685 (2003-03-01), None

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