Lateral DMOS transistor for RF/microwave applications

Details Lateral DMOS transistor for RF/microwave applications Lateral DMOS transistor for RF/microwave applications

1997-09-29

1998-10-13

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

148DIG126, H01L 218236

Patent

active

058211446

ABSTRACT:
An IGFET device (lateral DMOS transistor) with reduced cell dimensions which is especially suitable for RF and microwave applications, includes a semiconductor substrate having an epitaxial layer with a device formed in a surface of the epitaxial layer. A sinker contact is provided from the surface to the epitaxial layer to the substrate for use in grounding the source region to the grounded substrate. The sinker contact is aligned with the source region and spaced from the width of the channel region whereby lateral diffusion in forming the sinker contact does not adversely affect the pitch of the cell structure. The reduced pitch increases output power and reduces parasitic capacitance whereby the device is well-suited for low side switches and as an RF/microwave power transistor.

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