Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-26
2010-11-09
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29256
Reexamination Certificate
active
07829945
ABSTRACT:
A gate stack comprising a uniform thickness gate dielectric, a gate electrode, and an oxygen-diffusion-resistant gate cap is formed on a semiconductor substrate. Thermal oxidation is performed only on the drain side of the gate electrode, while the source side is protected from thermal oxidation. A thermal oxide on the drain side sidewall of the gate electrode is integrally formed with a graded thickness silicon oxide containing gate dielectric, of which the thickness monotonically increases from the source side to the drain side. The thickness profile may be self-aligned to the drain side edge of the gate electrode, or may have a portion with a self-limiting thickness. The graded thickness profile may be advantageously used to form a lateral diffusion metal oxide semiconductor field effect transistor providing an enhanced performance.
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Adkisson James W.
Feilchenfeld Natalie B.
Gambino Jeffrey P.
Voegeli Benjamin T.
Zierak Michael J.
International Business Machines - Corporation
Kotulak, Esq. Richard
Scully , Scott, Murphy & Presser, P.C.
Vu David
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