Lateral bipolar transistor with compensated well regions

Details Lateral bipolar transistor with compensated well regions Lateral bipolar transistor with compensated well regions

2007-12-28

2010-11-09

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S204000, C438S207000, C438S236000, C257SE27015

Reexamination Certificate

active

07829405

ABSTRACT:
Conduction between source and drain or emitter and collector regions is an important characteristic in transistor operation, particularly for lateral bipolar transistors. Accordingly, techniques that can facilitate control over this characteristic can mitigate yield loss by promoting the production of transistors that have an increased likelihood of exhibiting desired operational performance. As disclosed herein, well regions are established in a semiconductor substrate to facilitate, among other things, control over the conduction between the source and drain regions of a lateral bipolar transistor, thus mitigating yield loss and other associated fabrication deficiencies. Importantly, an additional mask is not required in establishing the well regions, thus further mitigating (increased) costs associated with promoting desired device performance.

REFERENCES:
patent: 6093613 (2000-07-01), Verma et al.
patent: 6127236 (2000-10-01), Prall et al.
patent: 2007/0241426 (2007-10-01), Hiroshima et al.

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