Laser treatment device, laser treatment method, and...

Details Laser treatment device, laser treatment method, and... Laser treatment device, laser treatment method, and...

2006-09-26

2006-09-26

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S149000

Reexamination Certificate

active

07112517

ABSTRACT:
Object of the InventionTo obtain thin film transistors with controlled characteristics on a substrate.MeansA semiconductor film formed on a substrate is crystallized by continuously oscillating type laser. The scanning direction of the continuously oscillating type laser and the crystallization direction are coincident with each other. Adjustment of the crystallization direction and the charge transferring direction of the thin film transistors makes control of the characteristics of the thin film transistors possible. With respect to the laser treatment device for crystallizing the semiconductor film, the beam shape of laser oscillated from the continuously oscillating type laser device is made to be elliptical by a cylindrical lens and said cylindrical lens is made rotatable and said laser beam is scanned on said substrate by a galvanomirror and said laser beam can be focused upon said substrate by f-θ lens.

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