Laser thermal annealing to eliminate oxide voiding

Details Laser thermal annealing to eliminate oxide voiding Laser thermal annealing to eliminate oxide voiding

2005-05-31

2005-05-31

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S438000, C438S646000, C438S795000

Reexamination Certificate

active

06900121

ABSTRACT:
Oxide voiding is eliminated was substantially reduced by laser thermal annealing. Embodiments include fabricating flash memory devices by depositing a BPSG over spaced apart transistors as the first interlayer dielectric with voids formed in gaps between the transistors and laser thermal annealing the BPSG layer in flowing nitrogen to eliminate or substantially reduce the voids by reflowing the BPSG layer.

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