Laser thermal annealing methods for flash memory devices

Details Laser thermal annealing methods for flash memory devices Laser thermal annealing methods for flash memory devices

2006-02-21

2006-02-21

Everhart, Caridad M. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000

Reexamination Certificate

active

07001814

ABSTRACT:
A method of manufacturing an ONO (oxide-nitride-oxide) insulating layer for a flash memory device, the insulating layer including a first oxide layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein at least one of the first oxide layer, the nitride layer and the second oxide layer are conditioned using laser thermal annealing.

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