Laser thermal annealing method for forming semiconductor...

Details Laser thermal annealing method for forming semiconductor... Laser thermal annealing method for forming semiconductor...

2005-10-18

2005-10-18

Smith, Matthew (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S149000, C438S422000, C438S239000, C438S674000, C438S057000, C438S305000

Reexamination Certificate

active

06955997

ABSTRACT:
A method of manufacturing a semiconductor device, including depositing a first layer of dielectric material onto the device, laser thermal annealing a surface of the first layer, and depositing a second layer of dielectric material over the laser thermal annealed surface of the first layer. The two layers are preferably low dielectric constant (“low-k”) material that form an inter-layer dielectric (“ILD”) layer of a semiconductor device. According to one aspect of the invention, a third layer of low-k material is deposited over the second layer and a surface of the third layer is also laser thermal annealed.

REFERENCES:
patent: 4437139 (1984-03-01), Howard
patent: 5864172 (1999-01-01), Kapoor et al.
patent: 6121130 (2000-09-01), Chua et al.
patent: 6435943 (2002-08-01), Chang et al.
patent: 6559014 (2003-05-01), Jeon
patent: 2002/0168831 (2002-11-01), Miyasaka

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