Laser processing method of semiconductor device

Details Laser processing method of semiconductor device Laser processing method of semiconductor device

1997-11-12

1999-12-28

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438142, 438166, 257 59, 257325, H01L 29792, H01L 21306

Patent

active

060081015

ABSTRACT:
It is intended to provide a technique of separately forming thin-film transistors disposed in a peripheral circuit area and those disposed in a pixel area in accordance with characteristics required therefor in a manufacturing process of semiconductor devices to constitute a liquid crystal display device. In an annealing step by laser light illumination, laser light is selectively applied to a semiconductor thin-film by partially masking it. For example, to illuminate the peripheral circuit area and the pixel area with laser light under different conditions in manufacture of an active matrix liquid crystal display device, laser light is applied at necessary illumination energy densities by using a mask. In this manner, a crystalline silicon film having a necessary degree of crystallinity in a selective manner can be obtained.

REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5219786 (1993-06-01), Noguchi
patent: 5247365 (1993-09-01), Mochizuki et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5365875 (1994-11-01), Asai et al.
patent: 5372836 (1994-12-01), Imahashi et al.
patent: 5413958 (1995-05-01), Imahashi et al.
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5432122 (1995-07-01), Chae
patent: 5541119 (1996-07-01), Kodama
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5561081 (1996-10-01), Takenouchi et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5589406 (1996-12-01), Kato et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5789763 (1998-08-01), Kato et al.
patent: 5811328 (1998-09-01), Zhang et al.
patent: 5877526 (1999-03-01), Yamaguchi
Young Min Jhon, Dong Hwan Kim, Hong Chu and Sang Choi, "Crystallization of Amorphous silicon by Excimer Laser Annealing with a Line Shape Beam Having a Gaussian Profile", Jpn. J. Appl. Phys., vol. 33, p. L1438, Oct. 15, 1994.
G. Liu et al., "Polycrystalline Silicon Thin Film Transistors on Corning 7059 Glass Substrates Using Short Time, Low-Temperature Processing", Appl. Phys. Lett. 62(20), May 17, 1993, pp. 2554-2556.
G. Liu et al., "Selective Area Crystallization of Amorphous Silicon Films by Low-Temperature Rapid Thermal Annealing", Appl. Phys. Lett 55(7), Aug. 14, 1989, pp. 660-662.

Affiliated with

Also associated with

Rating

Laser processing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser processing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser processing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2381839