Laser processing method, method for forming a flash memory, insu

Details Laser processing method, method for forming a flash memory, insu Laser processing method, method for forming a flash memory, insu

1996-08-07

1998-08-04

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438549, H01L 218247

Patent

active

057892920

ABSTRACT:
A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type opposite to said first conductive type and incorporating the impurity contained in said impurity gas into the surface of said semiconductor substrate, thereby modifying the type and/or the intensity of the conductive type thereof. Provides devices having a channel length of 0.5 .mu.m or less and impurity regions 0.1 .mu.m or less in depth.

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"Fabrication of Submicrometer MOSFET's Using Gas Immersion Laser Doping (GILD) IEEE Electron Device Letters vol. EDL-7, No. 7, pp. 440-442, Jul. 1986.

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