Laser processing method, method for forming a flash memory,...

Details Laser processing method, method for forming a flash memory,... Laser processing method, method for forming a flash memory,...

2005-03-21

2009-11-24

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S265000, C438S593000, C257SE21691

Reexamination Certificate

active

07622343

ABSTRACT:
A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type opposite to said first conductive type and incorporating the impurity contained in said impurity gas into the surface of said semiconductor substrate, thereby modifying the type and/or the intensity of the conductive type thereof. Provides devices having a channel length of 0.5 μm or less and impurity regions 0.1 μm or less in depth.

REFERENCES:
patent: 3849216 (1974-11-01), Salters
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 3993991 (1976-11-01), Lorteije et al.
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4660062 (1987-04-01), Nishizawa et al.
patent: 4665418 (1987-05-01), Mizutani
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4766088 (1988-08-01), Kono et al.
patent: 4780424 (1988-10-01), Holler et al.
patent: 4794565 (1988-12-01), Wu et al.
patent: 4841347 (1989-06-01), Hsu
patent: 4861730 (1989-08-01), Hsia et al.
patent: 4882707 (1989-11-01), Mizutani
patent: 4958321 (1990-09-01), Chang
patent: 4972371 (1990-11-01), Komori et al.
patent: 5021848 (1991-06-01), Chiu
patent: 5045901 (1991-09-01), Komori et al.
patent: 5066992 (1991-11-01), Wu et al.
patent: 5079603 (1992-01-01), Komori et al.
patent: 5106776 (1992-04-01), Shen et al.
patent: 5114876 (1992-05-01), Weiner
patent: 5153146 (1992-10-01), Toyoshima et al.
patent: 5158903 (1992-10-01), Hori et al.
patent: 5180690 (1993-01-01), Czubatyj et al.
patent: 5202576 (1993-04-01), Liu et al.
patent: 5229311 (1993-07-01), Lai et al.
patent: 5254865 (1993-10-01), Koshimaru
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5434440 (1995-07-01), Yoshitomi et al.
patent: 5476802 (1995-12-01), Yamazaki et al.
patent: 5495121 (1996-02-01), Yamazaki et al.
patent: 5565700 (1996-10-01), Chou et al.
patent: 5569615 (1996-10-01), Yamazaki et al.
patent: 5716871 (1998-02-01), Yamazaki et al.
patent: 5789292 (1998-08-01), Yamazaki et al.
patent: 5849043 (1998-12-01), Zhang et al.
patent: 5851909 (1998-12-01), Kamiya et al.
patent: 5938839 (1999-08-01), Zhang
patent: 5965915 (1999-10-01), Yamazaki et al.
patent: 6424008 (2002-07-01), Yamazaki et al.
patent: 6734490 (2004-05-01), Esseni et al.
patent: 6853029 (2005-02-01), Ichige et al.
patent: 0 361 078 (1990-04-01), None
patent: 47-36775 (1972-11-01), None
patent: 48-063680 (1973-09-01), None
patent: 50-36955 (1975-11-01), None
patent: 50-156377 (1975-12-01), None
patent: 52-23532 (1977-05-01), None
patent: 55-044748 (1980-03-01), None
patent: 55-15869 (1980-04-01), None
patent: 55-117280 (1980-09-01), None
patent: 57-148374 (1982-09-01), None
patent: 57-190361 (1982-11-01), None
patent: 58-048961 (1983-03-01), None
patent: 59-126674 (1984-07-01), None
patent: 59-229873 (1984-12-01), None
patent: 62-134972 (1987-06-01), None
patent: 62-213163 (1987-09-01), None
patent: 63-169024 (1988-07-01), None
patent: 63-208214 (1988-08-01), None
patent: 63-226059 (1988-09-01), None
patent: 02-002162 (1990-01-01), None
patent: 02-128477 (1990-05-01), None
patent: 03-148836 (1991-06-01), None
patent: 03-079425 (1991-08-01), None
patent: 03-218638 (1991-09-01), None
patent: 04-080966 (1992-03-01), None
patent: 04-118936 (1992-04-01), None
patent: 04-209573 (1992-07-01), None
patent: 04-253374 (1992-09-01), None
patent: 05-90159 (1993-04-01), None
patent: 06-151344 (1994-05-01), None
Sameshima et al., “XeC1 Excimer Laser Annealing Used to Fabricate Poly-si TFTs,” Mat. Res. Soc. Symp. Proc., vol. 71, 1986, pp. 435-440.
Corey et al., “A Shallow Junction Submicrometer PMOS Process Without High Temperature Anneals,” IEEE Electron Device Letters, vol. 9, No. 10, Oct. 1988, pp. 542-544.
“Fabrication of Submicrometer MOSFET's Using Gas Immersion Laser Doping (GILD),” IEEE Electron Device Letters, vol. EDL-7, No. 7, pp. 440-442, Jul. 1986, Carey.
Office Action dated May 19, 2004 and Pending Claims for U.S. Appl. No. 09/532,097, filed Mar. 21, 2000.
Request for Ex Parte Reexamination filed Jan. 12, 2006 of U.S. Patent No. 6,424,008 to Yamazaki et al. issued Jul. 23, 2003.
Official Action inEx ParteReexamination dated May 21, 2007, Control No. 90/007,872, U.S Patent No. 6,424,008 to Yamazaki et al.
Peercy, Paul S., “The Drive to Miniaturization,” Nature, vol. 406, Aug. 31, 2000, pp. 1023-1026.
Lukasiak, Lidia, et al., “Silicon Microelectronics: Where We Have Come From and Where We are Heading,” Journal of Telecommunications and Information Technology, Jan. 2004, pp. 7-14.
Spencer, W.J. et al., “National Technology Roadmaps: The U.S. Semiconductor Experience,” 4thInternational Conference on Solid-State and Integrated Circuit Technology, Oct. 24-28, 1995, pp. 211-220.
Wolf, et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, Sunset Beach, CA, 1986, p. 1.
Official Action inEx ParteReexamination dated Jan. 24, 2008, U.S. Appl. No. 90/007,872, U.S. Patent No. 6,424,008 to Yamazaki et al.
Wolf, et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, 2ndEdition, Lattice Press, Sunset Beach, CA, 1986, pp. 57, 290, 307, 325-327 and 329.
Official Action dated Jan. 29, 2008 in U.S. Appl. No. 10/199,514 filed Jul. 22, 2002.

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