Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-04-18
2009-06-16
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S198000, C438S424000, C257SE21347
Reexamination Certificate
active
07547616
ABSTRACT:
The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.
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Fogel Keith E.
Lee Kam-Leung
Saenger Katherine L.
Sung Chun-Yung
Yin Haizhou
International Business Machines - Corporation
Pham Thanhha
Trepp, Esq. Robert
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