Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-11-21
2006-11-21
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S487000, C438S308000, C257SE21347
Reexamination Certificate
active
07138306
ABSTRACT:
The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.
REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4734550 (1988-03-01), Imamura et al.
patent: 4779943 (1988-10-01), Tatsuno et al.
patent: 4908493 (1990-03-01), Susemihl
patent: 5304357 (1994-04-01), Sato et al.
patent: 5521107 (1996-05-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5669979 (1997-09-01), Elliott et al.
patent: 5708252 (1998-01-01), Shinohara et al.
patent: 5754328 (1998-05-01), Cobb et al.
patent: 5814156 (1998-09-01), Elliott et al.
patent: 5828481 (1998-10-01), Cobb et al.
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5893990 (1999-04-01), Tanaka
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 6013928 (2000-01-01), Yamazaki et al.
patent: 6038075 (2000-03-01), Yamazaki et al.
patent: 6156997 (2000-12-01), Yamazaki et al.
patent: 6159777 (2000-12-01), Takenouchi et al.
patent: 6160827 (2000-12-01), Tanaka
patent: 6204099 (2001-03-01), Kusumoto et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6242292 (2001-06-01), Yamazaki et al.
patent: 6248606 (2001-06-01), Ino et al.
patent: 6249385 (2001-06-01), Yamazaki et al.
patent: 6265745 (2001-07-01), Kusumoto et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6291320 (2001-09-01), Yamazaki et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6410373 (2002-06-01), Chang et al.
patent: 6441965 (2002-08-01), Yamazaki et al.
patent: 6521473 (2003-02-01), Jung
patent: 6534744 (2003-03-01), Yamazaki et al.
patent: 6535535 (2003-03-01), Yamazaki et al.
patent: 6556711 (2003-04-01), Koga et al.
patent: 6563843 (2003-05-01), Tanaka
patent: 6573161 (2003-06-01), Miyasaka et al.
patent: 6693257 (2004-02-01), Tanaka
patent: 6809012 (2004-10-01), Yamazaki et al.
patent: 2001/0036755 (2001-11-01), Tanaka
patent: 2002/0094008 (2002-07-01), Tanaka
patent: 2002/0151121 (2002-10-01), Tanaka
patent: 2003/0021307 (2003-01-01), Yamazaki
patent: 2003/0024905 (2003-02-01), Tanaka
patent: 2003/0059990 (2003-03-01), Yamazaki
patent: 2003/0080099 (2003-05-01), Tanaka et al.
patent: 2003/0132205 (2003-07-01), Yamazaki et al.
patent: 2003/0203549 (2003-10-01), Yamazaki et al.
patent: 1 055 479 (2000-11-01), None
patent: 1 083 590 (2001-03-01), None
patent: 62-104117 (1987-05-01), None
patent: 01-239837 (1989-09-01), None
patent: 02-181419 (1990-07-01), None
patent: 03-210990 (1991-09-01), None
patent: 7-183540 (1995-07-01), None
patent: 08-195357 (1996-07-01), None
patent: 09-043541 (1997-02-01), None
patent: 09-102468 (1997-04-01), None
patent: 2000-269161 (2000-09-01), None
patent: 2001-156018 (2001-06-01), None
patent: 2001-250790 (2001-09-01), None
patent: 2002-139697 (2002-05-01), None
patent: 2002-141300 (2002-05-01), None
US 6,414,981, 07/2002, Tanaka (withdrawn)
Search Report in counterpart Singapore Application No. 200204609-2 and Written Opinion dated Apr. 27, 2004, 12 pages.
Ishihara et al., “Location-Controlled Adjacent Grains Following Excimer-Laser Melting of Si Thin-Films,” AM-LCD '98, Jan. 1, 1998, pp. 153-156.
Crowder et al., “Low-Temperature Single-Crystal Si TFT's Fabricated on Si Films Processed via Sequential Lateral Solidification,” IEEE Electron Device Letters, vol. 19, No. 8, Aug. 1, 1998, pp. 306-308.
Hara et al., “Ultra-High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization,” AM-LCD '01, Jan. 1, 2001, pp. 227-230.
Takeuchi et al., “Performance of poly-Si TFTs fabricated by a Stable Scanning CW Laser Crystallization,” AM-LCD '01 Jan. 1, 2001, pp. 251-254.
Search Report, Intellectual Property Office of Singapore, Singapore Application No. 200205715-6.
European Search Report dated May 4, 2005 for EP 02021768.3.
European Search Report dated Feb. 24, 2005 for EP 02021768.3.
I. Indutnyi et al.,Holographic Optical Element Fabrication Using Chalcongenide Layers, Optical Engineering, vol. 34, No. 4, Apr. 1995, pp. 1030-1038.
Isobe Atsuo
Miyairi Hidekazu
Shiga Aiko
Shimomura Akihisa
Tanaka Koichiro
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Bradley K.
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