Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-04-24
2007-04-24
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C257SE21134
Reexamination Certificate
active
10871376
ABSTRACT:
When the laser light having the harmonic is used for crystallizing the semiconductor film, there is a problem that the energy conversion efficiency from the fundamental wave to the harmonic is low. And since the laser light converted into the harmonic has lower energy than the fundamental wave, it is difficult to enhance the throughput by enlarging the area of the beam spot. The present invention provides a laser irradiation apparatus emitting the fundamental wave simultaneously with the wavelength not longer than that of the fundamental wave, typically the harmonic converted from the fundamental wave, wherein the laser light emitted from one resonator having the fundamental wave and the wavelength not longer than that of the fundamental wave are irradiated without being separated.
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Shimomura Akihisa
Shoji Hironobu
Dolan Jennifer M
Jr. Carl Whitehead
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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