Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-06-26
1992-08-18
Lewis, Michael
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156612, 156DIG80, 156DIG86, 156DIG99, 20415741, 423290, 427 42, 427 531, 427255, C30B 2306, C23C 1634, C01B 21064
Patent
active
051395916
ABSTRACT:
Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.
REFERENCES:
patent: 4297387 (1981-10-01), Beale
patent: 4565741 (1986-01-01), Morimoto et al.
patent: 4714625 (1987-12-01), Chopra et al.
patent: 4843031 (1989-06-01), Ban et al.
patent: 4957773 (1990-09-01), Spencer et al.
patent: 4973494 (1990-11-01), Yamazaki
patent: 4980730 (1990-12-01), Mishima et al.
Electronics Letters, vol. 25, No. 23, 9th Nov. 1989, pp. 1602-1603; T. K. Paul et al.: "Laser-Assisted Deposition of BN Films on InP for MIS Applications".
Thin Solid Films, vol. 153, No. 1, 26th Oct. 1987, pp. 487-496; P. Lin et al.: "Preparation and Properties of Cubic Boron Nitride Coatings".
A. R. Badzian, "Cubic Boron Nitride-Diamond Mixed Crystals", Mat. Res. Bull., vol. 16, pp. 1385-1393, (1981).
G. Kessler et al., "Laser Pulse Vapour Deposition of Polycrystalline Wurtzite-Type BN", Thin Solid Films, vol. 147, pp. L45-L50 (1987).
P. T. Murray et al., "Growth of Stoichiometric BN Films by Pulsed Laser Evaporation", Mat. Res. Soc. Cymp. Proc., vol. 128, pp. 469-474 (1989).
G. L. Doll et al., "X-Ray Diffraction Study of Cubic Boron Nitride Films Grown Epitaxially on Silicon", Mat. Res. Soc., Boston, Mass. (1990).
E. G. Bauer et al., Mat. Res. 5, 852 (1990).
S. Koizumi et al., Appl. Phys. Lett. 57, 563 (1990).
S. P. S. Arya et al., Thin Solid Films 157, 267 (1988).
H. Sankur et al., Appl. Phys. A 47, 271 (1988).
B. E. Williams et al., J. Mat. Res. 4, 373 (1989).
J. S. Speck et al., J. Mat. Res. 5, 980 (1990).
S. V. Gaponov et al., Sov. Tech. Phys. 27, 1130 (1982).
S. J. Thomas et al., Appl. Phys. Lett. 40, 200 (1982).
J. E. Rothenberg et al., Nucl. Instr. and Meth. B1, 291 (1984).
R. N. Sheftal et al., Crys. Res. Tech. 16, 887 (1981).
G. L. Doll et al., "Effects of Excimer Laser Ablation on the Surfaces of Hexagonal Boron Nitride Targets", Mat. Res. Soc., Boston, Mass. (1990).
D. Dijkkamp et al., App. Phys. Lett. 51, 619 (1987).
Q. Y. Ying et al., Appl. Phys. Lett. 55, 1041 (1989).
J. T. Cheung et al., CRC Critical Reviews in Solid State and Materials Sciences 15, 63 (1988).
J. P. Rebouillat et al., Proceedings of the Materials Research Society, vol. 151, 259 (1989).
H. Schwartz et al., J. Vac. Sci. Techn. 6, 373 (1969).
S. G. Hansen et al., Appl. Phys. Lett. 52, 81 (1988).
R. J. Nemanich et al., Phys. Rev. B 23, 6348 (1981).
Doll Gary L.
Peck Charles A.
Sell Jeffrey A.
Brooks Cary W.
General Motors Corporation
Kalinchak Stephen G.
Lewis Michael
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