Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-05
2011-04-05
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C117S008000, C117S010000, C117S904000
Reexamination Certificate
active
07919366
ABSTRACT:
A laser crystallization method in which an amorphous silicon thin film2formed on a substrate1is irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin film2with an absorbent to form an absorbent layer3on the desired specific local areas of the amorphous silicon thin film2and laser annealing for crystallizing the specific local areas of the amorphous silicon thin film2by irradiating the amorphous silicon thin film2including the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layer3and unabsorbable by the amorphous silicon thin film2for heating the absorbent layer3.
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Goto Tatsumi
Inami Toshio
Jitsuno Takahisa
Kusama Hideaki
Togashi Ryotaro
Griffin & Szipl, P.C.
Osaka University
The Japan Steel Works Ltd.
Wilczewski Mary
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