Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2006-06-20
2006-06-20
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S458000, C438S459000
Reexamination Certificate
active
07064045
ABSTRACT:
A method for forming a patterned silicon bearing material, e.g., silicon substrate. The method includes providing a silicon substrate, which has a surface region and a backside region. The method includes forming a plurality of recessed regions on the surface region. Each of the plurality of recessed regions has a border region. Preferably, the plurality of recessed regions forms a patterned surface region. The method includes bonding (e.g., hermetic bonding or on-hermetic seal) the patterned surface region to a handle surface region of a handle substrate, e.g., glass substrate. Each of the border regions, which protrude outwardly from the recessed regions, is bonded to the handle surface region, while each of the recessed regions remain free from attachment to any surface of the handle surface region. The method includes applying electromagnetic radiation comprising a laser beam to selected regions on the backside to ablate a thickness of silicon substrate overlying each of the recessed regions. The method also includes releasing a thickness of material defined within the recessed region while maintaining each of the border regions bonded to the handle surface region to form a plurality of silicon structures bonded to the handle surface region.
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Lindsay, Jr. Walter L
Miradia Inc.
Townsend and Townsend / and Crew LLP
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