Laser annealing method and laser annealing device

Details Laser annealing method and laser annealing device Laser annealing method and laser annealing device

2006-05-09

2006-05-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S905000, C438S166000, C438S509000, C438S795000, C117S008000, C117S009000, C117S010000

Reexamination Certificate

active

07041580

ABSTRACT:
A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the air. Also, a laser-annealing device includes a cleaning chamber, and a laser irradiation chamber, wherein a substrate to be processed is transported between the cleaning chamber and the laser irradiation chamber without being exposed to the air.

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