Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-13
2005-09-13
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C219S121760, C372S092000
Reexamination Certificate
active
06943086
ABSTRACT:
A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary temporal energy change while pulsing ; (2) to have an arbitrary spatial energy distribution using a beam-homogenizer, filter having an arbitrary transmittance distribution, and rectangular slit; and (3) to eliminate coherency thereof using a high-speed rotating diffuser. In this manner, it is possible to realize a liquid crystal display device in which a driving circuit comprising a polycrystalline silicon film having substantially the same properties as a single crystal is incorporated in a TFT panel device.
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Hatano Mutsuko
Hongo Mikio
Nakata Toshihiko
Nomoto Mineo
Ohkura Makoto
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Lee Calvin
Nelms David
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