Large grain size conductive structure for narrow...

Details Large grain size conductive structure for narrow... Large grain size conductive structure for narrow...

2011-06-07

2011-06-07

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S767000, C257SE23011

Reexamination Certificate

active

07956463

ABSTRACT:
An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer, a grain growth promotion layer, an agglomerated plating seed layer, an optional second plating seed layer a conductive structure. The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation.

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