Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-01-14
2000-04-11
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 49, 257 51, 257 64, 257 67, H01L 2972
Patent
active
06049106&
ABSTRACT:
A vertical thin film transistor formed in a single grain of polysilicon having few or no grain boundaries for use in memory, logic and display applications. The transistor is formed from a thin film of polysilicon having large columnar grains, in which source and drain regions have been formed. The large grain size and columnar grain orientation of the thin film are provided by recrystallizing a thin amorphous silicon film, or by specialized deposition of the thin film. Use of a thin film permits the transistor to be formed on an insulating substrate such as glass, quartz, or inexpensive silicon rather than a semiconductor chip, thereby significantly decreasing device cost.
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Micro)n Technology, Inc.
Wojciechowicz Edward
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