Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-05-27
2008-05-27
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C977S724000, C977S865000
Reexamination Certificate
active
07379326
ABSTRACT:
A high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means62and a writing word line43are disposed relative to a perpendicular magnetic recording film50, and a reading/writing bit-line conductor41, a magnetoresistive-effect element20and a reading word lead conductor42are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film50. A magnetic probe30composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element20in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
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Hatakeyama Rikizou
Ido Hideaki
Kamijo Yoshimi
Mitsuzuka Akira
Mori Nobuyuki
Luu Pho M.
UMK Technologies Co., Ltd.
Westerman, Hattori, Daniels & Adrian , LLP.
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