Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-02-09
2000-07-04
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438294, 438525, 257376, H01L 21336, H01L 21425
Patent
active
060837950
ABSTRACT:
The present invention provides a method of manufacturing MOS device having threshold voltage adjustment region 28 ormed using a large angled implant. The invention's angled implant serves as both (a) a Vt adjustment I/I and (b) a Channel stop I/I by (1) increasing the threshold voltage (Vt) and (2) reducing the leakage current. The method comprises forming spaced field oxide regions having bird's beaks on a semiconductor substrate. A field implant is performed using the spaced field oxide regions as an implant mask formed a deep channel stop region 24. Next, a sacrificial oxide layer 20 is formed over the resultant surface. In a critical step, a threshold voltage adjustment region 28 is formed by performing a large angled implant of a p-type ions. The p-type ions into are implanted into the channel region 19 and under the bird's beak 18 such that the threshold voltage is higher under the bird's beak than in the channel region 19. A MOS transistor is then formed over the channel region. The large angled threshold voltage implant of the present invention eliminates the reverse narrow width effect (e.g., reduced threshold voltage (Vt) and increased leakage currents).
REFERENCES:
patent: 4033026 (1977-07-01), Pashley
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4889825 (1989-12-01), Parillo
patent: 5045898 (1991-09-01), Chen et al.
patent: 5344787 (1994-09-01), Nagalingam et al.
patent: 5396096 (1995-03-01), Akamatsu et al.
patent: 5409848 (1995-04-01), Han et al.
patent: 5518941 (1996-05-01), Lin et al.
patent: 5688701 (1997-11-01), Kobayashi et al.
patent: 5719081 (1998-02-01), Racanelli et al.
patent: 5736416 (1998-04-01), Johansson
patent: 5811334 (1998-09-01), Buller et al.
patent: 5926712 (1999-07-01), Chen et al.
"Silicon Processing For The VLSI Era-vol. 3" Lattice Press, Sunset Beach, CA, 1995, p. 409-413.
Hsu Ching-Hsiang
Liang Mong-Song
Ackerman Stephen B.
Chaudhuri Olik
Coleman William David
Saile George O.
Stoffel William J.
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