Lanthanum hafnium oxide dielectrics

Details Lanthanum hafnium oxide dielectrics Lanthanum hafnium oxide dielectrics

2006-10-20

2008-08-12

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S405000, C257SE21646, C257SE21247

Reexamination Certificate

active

07411237

ABSTRACT:
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.

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